features low cost glass passivated junction low leakage low forward voltage drop high current capability and s im ilar s olvents mechanical data cas e:jedec do-41,m olded plas tic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.34 grams mounting position: any m a x i m u m r a t i n g s a n d e l e c t r i c a l c h a r a c t e r i s t i c s ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. 1n 49 46 g 1n 49 47 g 1n 49 48 g u n i t s maximum recurrent peak reverse voltage v rrm 6 00 8 00 10 00 v ma x imum rms v oltag e v r m s 42 0 56 0 70 0 v ma x imum dc b lo c king v o lt age v dc 6 00 8 00 100 0 v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak f orw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 1 .0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a = 1 25 ma x imum r ev er s e r e c ov er y time ( note 1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg note:1. measured with i f =0.5a, i r =1a, i rr =0.25a. 1n49 42g - - 1n49 48g 150 250 500 12 v o l t a g e r a n g e: 20 0 --- 10 00 v current: 1.0 a 400 1n 49 4 4 g 1.0 a f a st r ecove r y r e c t i f i er s i f(av) the plas tic m aterial carries u/l recognition 94v-0 i r 30.0 5.0 10 0 1 . 3 a i fsm 3. thermal resistance f rom junction to ambient. a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55---- +150 - 55---- + 150 55 d o - 4 1 200 140 200 1n 49 42 g easily cleaned with freon,alcohol,isopropanol 4 00 280 dimensions in millimeters www.diode.kr diode semiconductor korea
.2 tj=25 f=1mhz 1 .1 2 4 .4 1 . 0 2 40 10 20 60 1 0 0 4 10 20 40 100 0 1 8.3ms single half sine-wave 10 20 30 50 40 4 24 0 20 10 8 6 1008060 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6 0 . 0 1 0 . 0 2 0 . 0 6 0 . 0 4 0 . 1 0 . 2 0 . 4 1 . 0 2 4 10 100 t j =25 pulse width=300 diode semiconductor korea www.diode.kr
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